Impact ionization noise in SiGe HBTs: comparison of device and compact modeling with experimental results

Authors :: Sakalas, Paulius
Ramonas, Mindaugas
Schroter, Michael
Jungemann, Christoph
Shimukovitch, Artur
Kraus, Wolfgang
Source :: IEEE Transactions on Electron Devices. Feb, 2009, Vol. 56 Issue 2, p328, 9 p.
Publication Year :: 2009
Abstract: The noise behavior resulting from impact ionization (II) is assessed at room temperature for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with box Ge profile, featuring a maximum transit frequency of [f.sub.T] = 80 GHz. The noise parameters (NPs) measured over a wide range of collector-emitter voltages revealed that the weak avalanche model is accurate to capture II noise in examined SiGe HBTs.

Subjects :: Breakdown (Electricity) -- Analysis
Germanium -- Electric properties
Germanium -- Thermal properties
Monte Carlo method -- Usage
Silicon alloys -- Thermal properties
Silicon alloys -- Electric properties
Transistors -- Evaluation
Business
Electronics
Electronics and electrical industries

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