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Anomalous gate-edge leakage current in nMOSFETs caused by encroached growth of nickel silicide and its suppression by confinement of silicidation region using advanced [Si.sup.+] ion-implantation technique
Anomalous gate-edge leakage current in nMOSFETs caused by encroached growth of nickel silicide and its suppression by confinement of silicidation region using advanced [Si.sup.+] ion-implantation technique
- Source :
- IEEE Transactions on Electron Devices. Feb, 2009, Vol. 56 Issue 2, p206, 8 p.
- Publication Year :
- 2009
-
Abstract
- The quantitative analysis of the variability of encroached growth (VEG) of nickel silicide is used to study the association between the nickel silicide encroachment and the gate-edge leakage current. The [Si.sup.+] ion-implantation (Si-I.I.) technique can be applied to achieve low leakage current n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) without any disturbance of the transistor performance.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.200144868