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Anomalous gate-edge leakage current in nMOSFETs caused by encroached growth of nickel silicide and its suppression by confinement of silicidation region using advanced [Si.sup.+] ion-implantation technique

Anomalous gate-edge leakage current in nMOSFETs caused by encroached growth of nickel silicide and its suppression by confinement of silicidation region using advanced [Si.sup.+] ion-implantation technique

Authors :
Yamaguchi, Tadashi
Kashihara, Keiichiro
Okudaira, Tomonori
Tsutsumi, Toshiaki
Maekawa, Kazuyoshi
Murata, Naofumi
Tsuchimoto, Junichi
Asai, Koyu
Yoneda, Masahiro
Source :
IEEE Transactions on Electron Devices. Feb, 2009, Vol. 56 Issue 2, p206, 8 p.
Publication Year :
2009

Abstract

The quantitative analysis of the variability of encroached growth (VEG) of nickel silicide is used to study the association between the nickel silicide encroachment and the gate-edge leakage current. The [Si.sup.+] ion-implantation (Si-I.I.) technique can be applied to achieve low leakage current n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) without any disturbance of the transistor performance.

Details

Language :
English
ISSN :
00189383
Volume :
56
Issue :
2
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.200144868