Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices

The characterization of the electrical and thermal conduction properties of the low-resistance state of the conductive filament (CF) and the physical mechanism for the switching from low- to high-resistance state of NiO-based resistive-switching memory (RRAM) devices is reported. The results from the evaluation of the thermal resistance of the CF and the activation energy for the dissolution mechanism could be used to design a physics-based numerical model for the reset operation based on CF thermal breakup.