Back to Search Start Over

Band edge optical transitions in dilute-nitride GaNSb

Authors :
Wang, D.
Svensson, S.P.
Shterengas, L.
Belenky, G.
Kim, C.S.
Vurgaftman, I.
Meyer, J.R.
Source :
Journal of Applied Physics. Jan 1, 2009, Vol. 105 Issue 1, 014904-1-014904-4
Publication Year :
2009

Abstract

A comprehensive absorption and photoluminescence (PL) study of GaNSb bulk materials grown on nearly lattice-matched GaSb substrates are presented. The results have disclosed the effect of nitrogen incorporation on the fundament mental bandgap and on the character of band edge optical transitions in dilute-nitride GaNSb bulk materials.

Subjects

Subjects :
Antimony -- Electric properties
Antimony -- Optical properties
Gallium -- Electric properties
Gallium -- Optical properties
Nitrides -- Electric properties
Nitrides -- Optical properties
Photoluminescence -- Evaluation
Physics

Details

Language :
English
ISSN :
00218979
Volume :
105
Issue :
1
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.199634009

Tools

Authors Abstract Subjects Details