Formation and optical properties of GaSb quantum dots epitaxially grown on Si substrates using an ultrathin Si[O.sub.2] film technique

Authors :: Nakamura, Yoshiaki
Sugimoto, Tomohiro
Ichikawa, Masakazu
Source :: Journal of Applied Physics. Jan 1, 2009, Vol. 105 Issue 1, 014308-1-014308-4
Publication Year :: 2009
Abstract: A method is described for forming epitaxial GaSb quantum dots (QDs) on Si substrates by using ultrathin Si[O.sub.2] films that contain epitaxial Ge nuclei. The QDs with a type-I structure have displayed the quantum-confinement effect in photoluminescence (PL).

Subjects :: Antimony -- Electric properties
Antimony -- Optical properties
Gallium -- Electric properties
Gallium -- Optical properties
Germanium -- Electric properties
Germanium -- Optical properties
Photoluminescence -- Evaluation
Quantum electrodynamics -- Analysis
Physics

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