Detailed investigation of Ge-Si interdiffusion in the full range of [Si.sub.1-x][Ge.sub.x] (0<=x<=1) composition

Authors :: Gavelle, Mathieu
Bazizi, El Mehdi
Scheid, Emmanuel
Fazzini, Pier Francesco
Cristiano, Fuccio
Armand, Claude
Lerch, Wilfried
Paul, Silke
Campidelli, Yves
Halimaouli, Aomar
Source :: Journal of Applied Physics. Dec 1, 2008, Vol. 104 Issue 11, 113524-1-113524-7
Publication Year :: 2008
Abstract: M[Cs.sub.2.sup.+] secondary ion mass spectrometry method is used for examining the Ge-Si interdiffusion using Ge(:B) solid sources for Ge concentrations between 0 and 100 at. %. The effect of in situ B doping, which has induced a retardation of the Ge-Si interdiffusion, is analyzed.

Subjects :: Diffusion bonding (Metals) -- Analysis
Germanium -- Electric properties
Germanium -- Spectra
Mass spectrometry -- Usage
Semiconductor doping -- Analysis
Silicon -- Electric properties
Physics

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