Annealing study of carrier concentration in gradient-doped GaAs/GaAIAs epilayers grown by molecular beam epitaxy

We measured the carrier concentration distribution of gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy before and after annealing at 600[degrees]C, using electrochemical capacitance voltage profiling, to investigate the internal variation of transmission-mode GaAs photocathodes arising from the annealing process. The results show that the carrier concentration increased after annealing. As a result, the total band-bending energy in the gradient-doped GaAs emission layer increased by 25.24% after annealing, which improves the photoexcited electron movement toward the surface. On the other hand, the annealing process resulted in a worse carrier concentration discrepancy between the GaAs and the GaAlAs, which causes a lower back interface potential barrier, decreasing the amount of high-energy photoelectrons. OCIS codes: 160.2100, 250.0250.