Optoelectronic properties, structure and composition of a-SiC:H films grown in undiluted and H2 diluted silane-methane plasma

Application of optimized deposition conditions to plasma enhanced chemical vapor deposition in undiluted and H2 diluted SiH4 + CH4 gas mixtures allowed determination of structural, compositional, optoelectronic and defective properties of a-SiC:H films. H2 addition generated a different chemical composition for the deposited films, improved carbon integration and allowed the determination of solid matrix carbon fraction.