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MOCVD BaSrTiO3 for greater than or equal to 1-Gbit DRAMs
- Source :
- Solid State Technology. July, 1997, Vol. 40 Issue 7, p235, 5 p.
- Publication Year :
- 1997
-
Abstract
- Dynamic random access memory (DRAM) bit density has increased nearly fourfold every three years, from 4 kbit in 1972 to 64 Mbit now. Each successive generation has maintained the same […]
- Subjects :
- Semiconductor industry
DRAM
RAM
Chemical vapor deposition -- Methods
Thin films -- Production processes -- Methods -- Production management
Dynamic random access memory -- Materials -- Methods -- Production management -- Production processes
Semiconductor industry -- Production management -- Production processes
Dielectric films -- Production processes -- Methods -- Production management
Dynamic cell -- Materials -- Methods -- Production management -- Production processes
Random access memory -- Production processes -- Methods -- Production management
Subjects
Details
- Language :
- English
- ISSN :
- 0038111X
- Volume :
- 40
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- Solid State Technology
- Publication Type :
- Periodical
- Accession number :
- edsgcl.19655808