Performance of a double-sided silicon microstrip detector with a wide-pitch N-side readout using a field-plate and multi P-stop structure

Authors :: Saitoh, Y.
Akamine, T.
Inoue, M.
Yamanaka, J.
Echigo, N.
Miyahara, S.
Kamiya, M.
Ikeda, H.
Matsuda, T.
Bozek, A.
Haba, J.
Koike, S.
Ozaki, H.
Tanaka, M.
Iwasaki, H.
Higashi, Y.
Tsuboyama, T.
Yamada, Y.
Banas, E.
Natkaniec, Z.
Palka, H.
Rozanska, M.
Rybicki, K.
Okuno, S.
Tajima, H.
Aihara, H.
Fukunaga, C.
Hirose, T.
Asano, Y.
Mori, S.
Tsujita, Y.
Miyata, H.
Miyano, K.
Hazumi, M.
Hara, T.
Kawasaki, T.
Nagashima, Y.
Senyo, K.
Source :: IEEE Transactions on Nuclear Science. June, 1997, Vol. 44 Issue 3, p622, 7 p.
Publication Year :: 1997
Abstract: The previous double-sided silicon microstrip detector (DSSDs) prototype with integrated coupling capacitors formed by oxide-nitride-oxide (ONO) dielectric film showed band-to-band tunneling (BBT) current at the field-plate structure for the [N.sup.+] strip, which represented a limitation of the biasing configuration. We report improved characteristics of the modified field-plate structure and the wide-pitch n-side readout using a multi p-stop structure combined thereon.

Subjects :: Semiconductor nuclear counters -- Design and construction
Nuclear track detectors -- Design and construction
Particle accelerators -- Equipment and supplies
Business
Electronics
Electronics and electrical industries

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