Temperature dependence of the photoluminescence emission from [In.sub.x][Ga.sub.1-x]As quantum wells on GaAs(311) substrates

A study is conducted to compare the structure and the photoluminescence (PL) properties of [In.sub.0.2][Ga.sub.0.8]As/GaAs quantum well (QW) structures grown on (311)-oriented substrates and the band gap temperature dependence of bulk [In.sub.0.2][Ga.sub.0.8]As. The sharp difference observed for the QW-exciton temperature from the band gap temperature dependence of bulk [In.sub.0.2][Ga.sub.0.8]As is attributed to temperature and well width dependent modification of the QW energy levels by the Stark effect.