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Phosphorus and boron implantation in 6H-SiC

Authors :
Rao, Mulpuri V.
Gardner, Jason A.
Chi, P.H.
Holland, O.W.
Kelner, G.
Kretchmer, J.
Ghezzo, M.
Source :
Journal of Applied Physics. May 15, 1997, Vol. 81 Issue 10, p6635, 7 p.
Publication Year :
1997

Subjects

Subjects :
Ion implantation -- Research
Boron -- Research
Phosphorus -- Research
Silicon carbide -- Research
Physics

Details

ISSN :
00218979
Volume :
81
Issue :
10
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.19567206

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