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Control of the II-VI/GaAs interface reaction using hydrogen radical and Zn/As fluxes
- Source :
- Journal of Applied Physics. May 1, 1997, Vol. 81 Issue 9, p6165, 6 p.
- Publication Year :
- 1997
- Subjects :
- Diodes, Laser -- Analysis
Gallium arsenide -- Analysis
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 81
- Issue :
- 9
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.19567141