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Design and analysis for a 60-GHz low-noise amplifier with RF ESD protection

Design and analysis for a 60-GHz low-noise amplifier with RF ESD protection

Authors :
Huang, Bo-Jr
Wang, Chi-Hsueh
Chen, Chung-Chun
Lei, Ming-Fong
Huang, Pin-Cheng
Lin, Kun-You
Wang, Huei
Source :
IEEE Transactions on Microwave Theory and Techniques. Feb, 2009, Vol. 57 Issue 2, p298, 8 p.
Publication Year :
2009

Abstract

An RF electrostatic discharge (ESD) protection for millimeter-wave (MMW) regime applied to a 60-GHz low-noise amplifier (LNA) in mixed-signal and RF purpose 0.13-[micro]m CMOS technology is demonstrated in this paper. The measured results show that this chip achieves a small signal gain of 20.4 dB and a noise figure (NF) of 8.7 dB at 60 GHz with 65-mW dc power consumption. Without ESD protection, the LNA exhibits a gain of 20.2 dB and an NF of 7.2 dB at 60 GHz. This ESD protection using an impedance isolation method to minimize the RF performance degradation sustains 6.5-kV voltage level of the human body model on the diode and 1.5 kV on the core circuit, which is much higher than that without ESD protection ( Index Terms--CMOS integrated circuits (ICs), low-noise amplifiers (LNAs), millimeter-wave (MMW) circuits, RF electrostatic discharge (ESD) protection.

Details

Language :
English
ISSN :
00189480
Volume :
57
Issue :
2
Database :
Gale General OneFile
Journal :
IEEE Transactions on Microwave Theory and Techniques
Publication Type :
Academic Journal
Accession number :
edsgcl.194549271