Back to Search
Start Over
Design and analysis for a 60-GHz low-noise amplifier with RF ESD protection
Design and analysis for a 60-GHz low-noise amplifier with RF ESD protection
- Source :
- IEEE Transactions on Microwave Theory and Techniques. Feb, 2009, Vol. 57 Issue 2, p298, 8 p.
- Publication Year :
- 2009
-
Abstract
- An RF electrostatic discharge (ESD) protection for millimeter-wave (MMW) regime applied to a 60-GHz low-noise amplifier (LNA) in mixed-signal and RF purpose 0.13-[micro]m CMOS technology is demonstrated in this paper. The measured results show that this chip achieves a small signal gain of 20.4 dB and a noise figure (NF) of 8.7 dB at 60 GHz with 65-mW dc power consumption. Without ESD protection, the LNA exhibits a gain of 20.2 dB and an NF of 7.2 dB at 60 GHz. This ESD protection using an impedance isolation method to minimize the RF performance degradation sustains 6.5-kV voltage level of the human body model on the diode and 1.5 kV on the core circuit, which is much higher than that without ESD protection ( Index Terms--CMOS integrated circuits (ICs), low-noise amplifiers (LNAs), millimeter-wave (MMW) circuits, RF electrostatic discharge (ESD) protection.
- Subjects :
- Microwave amplifiers -- Design and construction
Electric discharges -- Control
Electric discharges through gases -- Control
Complementary metal oxide semiconductors -- Design and construction
Microwave integrated circuits -- Design and construction
Business
Computers
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 57
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Microwave Theory and Techniques
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.194549271