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Relationship between carrier diffusion lengths and defect density in hydrogenated amorphous silicon

Authors :
Sakata, I.
Yamanaka, M.
Sekigawa, T.
Source :
Journal of Applied Physics. Feb 1, 1997, Vol. 81 Issue 3, p1323, 8 p.
Publication Year :
1997

Details

ISSN :
00218979
Volume :
81
Issue :
3
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.19337073