Cite
Radiation effects on InGaN quantum wells and GaN simultaneously probed by ion beam-induced luminescence
MLA
Tringe, J. W., et al. “Radiation Effects on InGaN Quantum Wells and GaN Simultaneously Probed by Ion Beam-Induced Luminescence.” IEEE Transactions on Nuclear Science, vol. 55, no. 6, Dec. 2008, p. 3633. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.193342635&authtype=sso&custid=ns315887.
APA
Tringe, J. W., Conway, A. M., Felter, T. E., Chan, W. J. M., Castelaz, J., Lordi, V., Xia, Y., Stevens, C. G., & Wetzel, C. (2008). Radiation effects on InGaN quantum wells and GaN simultaneously probed by ion beam-induced luminescence. IEEE Transactions on Nuclear Science, 55(6), 3633.
Chicago
Tringe, J.W., A.M. Conway, T.E. Felter, W.J. Moberly Chan, J. Castelaz, V. Lordi, Y. Xia, C.G. Stevens, and C. Wetzel. 2008. “Radiation Effects on InGaN Quantum Wells and GaN Simultaneously Probed by Ion Beam-Induced Luminescence.” IEEE Transactions on Nuclear Science 55 (6): 3633. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.193342635&authtype=sso&custid=ns315887.