Dopant distribution in high fluence Fe implanted GaN

A combination of Rutherford backscattering/channeling spectrometry and time-of-flight elastic recoil detection analysis is used to study the undoped wurtzite GaN epilayers implanted at room temperature with 50-325 keV [Fe.sup.+] ions. The results showed that both radiation enhanced diffusion and the thermal diffusion of Fe atoms near the surface should be at least five times larger than ordinary bulk diffusion in order to explain the increased Fe surface concentration.