High-performance BOI FinFETs based on bulk-silicon substrate

The fabrication and experimental studies of a new body-on-insulator (BOI) FinFET device structure based on bulk-Si substrate is reported. The BOI FinFET features the localized insulator below the Si-Fin body, which could achieve both low source/drain (S/D) parasitic resistance and effective suppression of the S/D leakage beneath the Si-Fin channel as well as good heat dissipation capability.