Investigation of photoluminescence and photocurrent in InGaAsP/InP strained multiple quantum well heterostructures

Multiple quantum well InGaAsP/InP p-i-n laser heterostructures with various barrier thicknesses were studied by photoluminescence (PL) and photocurrent (PC) measurements. The PL spectrum and peak positions obtained were in good agreement with those derived from transfer matrix computations. Comparison of the measured quantum well PC with computed carrier escape rates showed that the photocurrent is controlled by the temperature dependence of the electron escape time.