A refined scheme for the reduction of threading dislocation densities in In(sub x)Ga(sub 1-x)As/GaAs epitaxial layers

Authors :: MacPherson, G.
Goodhew, P.J.
Source :: Journal of Applied Physics. Dec 15, 1996, Vol. 80 Issue 12, p6706, 5 p.
Publication Year :: 1996

Subjects :: Gallium arsenide semiconductors -- Usage
Dislocations in crystals -- Observations
Atomic force microscopy -- Usage
Layer structure (Solids) -- Research
Physics

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