A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation

The physical and continuous Berkeley Short-Channel IGFET I-V model in BSIM3v3, enhances the convergence property of circuit simulators. The dependencies of geometry and biases of parasitic series resistances, narrow width, bulk charge, and DIBL effects increase the accuracy of the model. The model has built-in dependencies of important dimensional and processing factors, permitting users to describe MOSFET characteristics accurately over a range of channel lengths and widths. It can be used for statistic modelling and has been implemented in various circuit simulators.