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Wafer through-hole interconnections with high vertical wiring densities
- Source :
- IEEE Transactions on Components, Packaging and Manufacturing Technology Part. Dec, 1996, Vol. 19 Issue 4, p516, 7 p.
- Publication Year :
- 1996
-
Abstract
- A wafer through-hole interconnection method is suitable for electronic circuit fabrication. The method can provide high density three-dimensional (3-D) wiring systems with interconnections of high vertical wiring density. Electrodeposition of photoresist on 3-D micromachined substrates shows that the interconnection line width can be of the order of 20 micrometers. The vertical wiring density can be up to 250 cm(super -1).
Details
- ISSN :
- 10709886
- Volume :
- 19
- Issue :
- 4
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Components, Packaging and Manufacturing Technology Part
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.19145582