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Wafer through-hole interconnections with high vertical wiring densities

Authors :
Christensen, Carsten
Kersten, Peter
Henke, Sascha
Bouwstra, Siebe
Source :
IEEE Transactions on Components, Packaging and Manufacturing Technology Part. Dec, 1996, Vol. 19 Issue 4, p516, 7 p.
Publication Year :
1996

Abstract

A wafer through-hole interconnection method is suitable for electronic circuit fabrication. The method can provide high density three-dimensional (3-D) wiring systems with interconnections of high vertical wiring density. Electrodeposition of photoresist on 3-D micromachined substrates shows that the interconnection line width can be of the order of 20 micrometers. The vertical wiring density can be up to 250 cm(super -1).

Details

ISSN :
10709886
Volume :
19
Issue :
4
Database :
Gale General OneFile
Journal :
IEEE Transactions on Components, Packaging and Manufacturing Technology Part
Publication Type :
Academic Journal
Accession number :
edsgcl.19145582