High-Q AlN/Si[O.sub.2] symmetric composite thin film bulk acoustic wave resonators

Authors :: Artieda, Alvaro
Muralt, Paul
Source :: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. Nov, 2008, Vol. 55 Issue 11, p2463, 6 p.
Publication Year :: 2008
Abstract: High-Q resonators with a symmetric composite layer Si[O.sub.2]-AlN[Si[O.sub.2] between the electrodes are developed. The temperature drift has disclosed the impact of the Si[O.sub.2] layers, which is more pronounced on the first harmonic, reducing the TCF to 4 ppm/K for the 3rd harmonic of the 310 nm oxide devices.

Subjects :: Resonators -- Composition
Resonators -- Design and construction
Silica -- Electric properties
Sound-waves -- Analysis
Business
Electronics
Electronics and electrical industries

Language :: English
ISSN :: 08853010
Volume :: 55
Issue :: 11
Database :: Gale General OneFile
Journal :: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control
Publication Type :: Academic Journal
Accession number :: edsgcl.190827257

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