CdTe/MgTe heterostructures: growth by atomic layer epitaxy and determination of MgTe parameters

Atomic layer epitaxy (ALE) was studied for the binary semiconductor MgTe. Reflection high-energy electron-diffraction studies on MgTe atomic deposition, together with x-ray diffraction, high-resolution transmission electron microscopy, and photoluminescence experiments on ALE-grown CdTe/MgTe superlattices were conducted. Findings showed that an autoregulated growth at 0.7+/-0.1 MgTe monolayer/ALE cycle can be attained in a substrate temperature range between 260 and 300 degrees C.