Evidence of reduced maximum E-field in Quasi-SOI MOSFET's

The lateral maximum electric field is lower in the Quasi silicon-on-insulator (QSOI) device as compared to bulk device. The substate current generated by impact ionization near the SOI drain is lower in the QSOI devices. The low substrate current is mainly caused by the low lateral maximum electric field. Thus the SOI metal oxide semiconductor field effect transistors (MOSFET) have higher breakdown voltages than the bulk devices,enhancing their reliability.