X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis

ErSi1.7 layers with high crystalline quality were produced by 90 keV Er ion implantation employing channeled implantation. The perpendicular and parallel elastic strain of the heteroepitaxial erbium silicide layers were obtained with symmetric and asymmetric x-ray reflections utilizing a double-crystal x-ray diffractometer. The quasipseudomorphic growth of the epilayer and the stiffness along a and c axes of epilayer were deduced from the x-ray diffraction.