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Molecular-beam epitaxial growth and characterization of Bi-Sr-Co-O thin films
- Source :
- Journal of Applied Physics. Nov 15, 1996, Vol. 80 Issue 10, p5691, 15 p.
- Publication Year :
- 1996
-
Abstract
- The thin-film growth of Co oxides and layered Bi-Sr-Co-O compounds were studied in detail under an ozone ambient. All samples were produced by a molecular-beam-epitaxy machine modified for the growth of Bi-based high-temperature superconductors. Findings revealed that the Co-232 films had resistivities on the order of 1 milliohm-cm. and that the carriers are holes, similar to those of Bi(sub 2)Sr(sub 2)Ca(sub n-1)Cu(sub n)O(sub 2n+4+delta) superconductors.
Details
- ISSN :
- 00218979
- Volume :
- 80
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.18997701