Abnormal temperature-dependent stability of on-plastic a-Si:H thin film transistors fabricated at 150 degree Celsius

Authors :: Chen, J.Z.
Cheng, I.-C.
Source :: Journal of Applied Physics. August 15, 2008, Vol. 104 Issue 4, 044508-1-044508-4
Publication Year :: 2008
Abstract: A study was conducted to examine the temperature-dependent stability on the inverted-staggered back-channel-etched a-Si:H thin film transistors (TFTs) prepared at a process temperature of 150 degree Celsius on plastic foil susbtrates. The results helped to identify the mechanism responsible for abnormal TFT fabrication and gate-bias stressing temperature dependent stability.

Subjects :: Etching -- Analysis
Gates (Electronics) -- Analysis
Silicon -- Thermal properties
Silicon -- Electric properties
Thin film devices -- Thermal properties
Physics

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