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Structural, electronic, and luminescence investigation of strain-relaxation induced electrical conductivity type conversion in GeSi/Si heterostructures
- Source :
- Journal of Applied Physics. Sept 1, 1996, Vol. 80 Issue 5, p2823, 10 p.
- Publication Year :
- 1996
Details
- ISSN :
- 00218979
- Volume :
- 80
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.18949696