Total ionizing dose effects on 4 Mbit Phase Change Memory arrays

We investigate Total Ionizing Dose effects on 4 Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the Bit-Line and the Word-Line selector MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations. Index Terms--Chalcogenide materials, GST, non-volatile memories, phase change memory, radiation effects, total ionizing dose.