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Acceptor and donor centers introduced by oxygen ionosorption at the a-Si:H film surface
- Source :
- Journal of Applied Physics. May 1, 1996, Vol. 79 Issue 9, p7041, 10 p.
- Publication Year :
- 1996
- Subjects :
- Amorphous semiconductors -- Research
Semiconductor films -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 79
- Issue :
- 9
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.18693990