Modeling and realization of a high-gain homojunction a-Si:H bulk barrier phototransistor

An simple analytical model accurately describes the structure behavior of amorphous silicon bulk-barrier phototransistors by incorporating the effects of a highly defected p-doped material. The model enables the study of various aspects of device performance by using the equilibrium model of defects in amorphous silicon as a guideline. The possibility of using low doping to develop p-doped base materials for high gain devices is discussed.