Thickness dependence of boron penetration through O2- and N2O-grown gate oxides and its impact on threshold voltage variation

MLA

Krisch, K. S., et al. “Thickness Dependence of Boron Penetration through O2- and N2O-Grown Gate Oxides and Its Impact on Threshold Voltage Variation.” IEEE Transactions on Electron Devices, vol. 43, no. 6, June 1996, p. 982. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.18630902&authtype=sso&custid=ns315887.

APA

Krisch, K. S., Green, M. L., Baumann, F. H., Brasen, D., Feldman, L. C., & Manchanda, L. (1996). Thickness dependence of boron penetration through O2- and N2O-grown gate oxides and its impact on threshold voltage variation. IEEE Transactions on Electron Devices, 43(6), 982.

Chicago

Krisch, K.S., M.L. Green, F.H. Baumann, D. Brasen, L.C. Feldman, and L. Manchanda. 1996. “Thickness Dependence of Boron Penetration through O2- and N2O-Grown Gate Oxides and Its Impact on Threshold Voltage Variation.” IEEE Transactions on Electron Devices 43 (6): 982. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.18630902&authtype=sso&custid=ns315887.