Back to Search
Start Over
A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body
- Source :
- IEEE Transactions on Electron Devices. August, 2008, Vol. 55 Issue 8, p2187, 8 p.
- Publication Year :
- 2008
-
Abstract
- A charge-based model is described for long-channel cylindrical surrounding-gate (SRG) MOSFETs from an intrinsic channel to a heavily doped body. The model is verified by numerical simulations with a wide range of SRG MOSFET geometric parameters and channel doping concentrations, including the undoped channel.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 8
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.184775291