Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann transport equation

The transport effects in silicon-nanowire field-effect transistors (SNW-FETs) are examined by using a 1-dimensional (1-D) Monte Carlo (MC) and a deterministic Boltzmann transport equations (BTE) solver. The turn-on characteristics resulting from self-consistent simulations have displayed an excellent agreement and so do the electron-distribution function at the virtual source of the SNW-FET and the drift velocity profile along the channel.