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Advanced high-voltage 4H-SiC Schottky rectifiers
- Source :
- IEEE Transactions on Electron Devices. August, 2008, Vol. 55 Issue 8, p1871, 4 p.
- Publication Year :
- 2008
-
Abstract
- The performance of 4H-SiC planar junction barrier Schottky (JBS) rectifiers and lateral channel JBS (LC-JBS) rectifiers is described. The lateral channel JBS rectifier is designed and demonstrated in 4H-SiC with up to 1.5-kV blocking capability and pinlike reverse characteristics.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 8
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.184773002