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Time response of two-dimensional gas-based vertical field metal-semiconductor-metal photodetectors
- Source :
- IEEE Transactions on Electron Devices. July, 2008, Vol. 55 Issue 7, p1762, 9 p.
- Publication Year :
- 2008
-
Abstract
- The fabrication and characterization of two-dimensional electron gas (2DEG)- and two-dimensional hole gas (2DHG)-based metal-semiconductor-metal (MSM) photodetectors (PDs) is discussed. Findings reveal the facilitation of one type of photogenerated carrier transport by a vertical field developed in the active absorption region due to the gamma-doping layer.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.184714136