Two-dimensional simulation of local oxidation of silicon: calibrated viscoelastic flow analysis

The implementation of a comprehensive viscoelastic modeling of the oxidation of silicon improves the numerical modeling of the local oxidation of silicon process for mass-production of integrated circuits. The model is based on the deformation of silicon and includes the viscoelastic behavior of oxide and nitride. The calculations of oxide shapes and stresses due to oxidation in silicon substrate display the predictive capacities of the model.