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Single particle-induced latchup

Authors :
Bruguier, G.
Palau, J-M.
Source :
IEEE Transactions on Nuclear Science. April, 1996, Vol. 43 Issue 2, p522, 11 p.
Publication Year :
1996

Abstract

This paper presents an up-to-date overview of the single-event latchup (SEL) hard failure mode encountered in electronic device applications involving heavy ion environment. This phenomenon is specific to CMOS technology. Single-event latchup is discussed after a short description of the effects induced by the interaction of a heavy ion with silicon. Understanding these effects is necessary to understand the different failures. This paper includes a description of the latchup phenomenon and the different triggering modes, reviews of models and hardening solutions, and finally presents new developments in simulation approaches.

Details

ISSN :
00189499
Volume :
43
Issue :
2
Database :
Gale General OneFile
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
edsgcl.18388726