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Product yield prediction system and critical area database

Authors :
Barnett, Thomas S.
Bickford, Jeanne P.
Weger, Alan J.
Source :
IEEE Transactions on Semiconductor Manufacturing. August, 2008, Vol. 21 Issue 3, p337, 5 p.
Publication Year :
2008

Abstract

Pre-silicon yield estimators for ASIC products have the potential for improved accuracy based on retrospective critical area and yield analysis of completed designs. A prototype closed-loop system, in which a database of observed yield and computed critical areas is continuously compiled and updated, is described in this paper. The database allows a yield model based on circuit content, which is available at the time of quote, but before the physical layout, to be optimized to more accurately reflect a technology's random defect sensitivities. Confining one's observations to the mature 130-nm technology minimizes the inclusion of systematic defects in the observed yield and allows for a more complete view of the random defect component of yield loss. Index Terms--Critical area analysis, yield learning, yield modeling.

Details

Language :
English
ISSN :
08946507
Volume :
21
Issue :
3
Database :
Gale General OneFile
Journal :
IEEE Transactions on Semiconductor Manufacturing
Publication Type :
Academic Journal
Accession number :
edsgcl.183366361