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Transition-metal-oxide-based resistance-change memories
- Source :
- IBM Journal of Research and Development. July-Sept, 2008, Vol. 52 Issue 4-5, p481, 12 p.
- Publication Year :
- 2008
- Subjects :
- Complementary metal oxide semiconductors -- Design and construction
Subjects
Details
- Language :
- English
- ISSN :
- 00188646
- Volume :
- 52
- Issue :
- 4-5
- Database :
- Gale General OneFile
- Journal :
- IBM Journal of Research and Development
- Publication Type :
- Periodical
- Accession number :
- edsgcl.182814980