Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Authors :: Tzu-Pin Chen
Wei-Hsin Chen
Chi-Jhung Lee
Kuei-Yi Chu
Li-Yang Chen
Ching-Wen Hung
Tsung-Han Tsai
Shiou-Ying Cheng
Wen-Chau Liu
Source :: Journal of Applied Physics. June 1, 2008, Vol. 103 Issue 11, 114506-1-114506-5
Publication Year :: 2008
Abstract: The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are analyzed. The temperature-dependent electron impact ionization characteristics of the device are examined.

Subjects :: Gallium arsenide -- Electric properties
Indium -- Electric properties
Indium -- Atomic properties
Ionization -- Analysis
Physics

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