Effects of growth temperature on InN/GaN nanodots grown by metal organic chemical vapor deposition

A conventional growth mode as well as flow-rate modulation epitaxy at various growth temperatures were used to study the InN nanodots grown on GaN by metal organic chemical vapor deposition. The results showed that the surface morphology of InN nanodots and their photoluminescence (PL) properties is greatly influenced by the different precursor injection schemes and the growth temperatures.