Characterization of thin textured tunnel oxide prepared by thermal oxidation of thin polysilicon film on silicon

A study analyzes thin textured tunnel oxide prepared by the thermal oxidation of thin polysilicon film on Si substrate (TOPS). A textured Si/SiO2 interface results from the rapid diffusion of oxygen through the grain boundaries of thin polysilicon film into the Si substrate and the increased oxidation rate at the grain boundaries. This results in localized high fields and increases electron injection into TOPS. Electron conduction efficiency is higher and electron trapping rate lower in TOPS, as compared to the normal tunnel oxide.