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Strain relaxation of Si/Ge multilayers: coherent islands formation and their evolution as a function of the strain
- Source :
- Journal of Applied Physics. Feb 1, 1996, Vol. 79 Issue 3, p1441, 7 p.
- Publication Year :
- 1996
- Subjects :
- Thin films, Multilayered -- Research
Strains and stresses -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 79
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.18153688