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FET rids scale-induced effects
- Source :
- Electronic Engineering Times. March 11, 1996, Issue n892, p35, 1 p.
- Publication Year :
- 1996
-
Abstract
- Charlottesville, Va. - A novel "heterodimensional" field-effect transistor design has been scaled below 0.5 micron, revealing superior performance over more conventional architectures. The approach, devised by device researchers at the […]
Details
- ISSN :
- 01921541
- Issue :
- n892
- Database :
- Gale General OneFile
- Journal :
- Electronic Engineering Times
- Publication Type :
- Periodical
- Accession number :
- edsgcl.18094752