Synchrotron-radiation-induced photodoping using disilane molecular-beam epitaxy: low-temperature high doping of

Subjects

Subjects :

Semiconductor doping -- Analysis
Semiconductor preparation -- Analysis
Epitaxy -- Analysis
Physics

Details

ISSN :

00218979

Volume :

79

Issue :

2

Database :

Gale General OneFile

Journal :

Journal of Applied Physics

Publication Type :

Academic Journal

Accession number :

edsgcl.18087880