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Spin injection into ferromagnetic [Co.sub.2]MnAl by optical absorption in GaAs

Authors :
Isber, Samih
Young Ju Park
Moodera, Jagadeesh S.
Heiman, Don
Source :
Journal of Applied Physics. April 1, 2008, Vol. 103 Issue 7, 07D712-1-07D712-3
Publication Year :
2008

Abstract

Spin-oriented electrons are injected into ferromagnetic [Co.sub.2]MnAl by optical absorption in GaAs and Schottky diode heterostructures are fabricated by molecular beam epitaxy growth of the Heusler ferromagnet [Co.sub.2]MnAl epitaxially on GaAs. Spin-polarized photocurrent is seen for forward biased conditions and a barrier height of 0.6 eV is found from I-V and photoemission experiments.

Subjects

Subjects :
Ferromagnetism -- Analysis
Gallium arsenide -- Magnetic properties
Gallium arsenide -- Optical properties
Molecular beams -- Usage
Spin coupling -- Analysis
Diodes, Schottky-barrier -- Magnetic properties
Diodes, Schottky-barrier -- Optical properties
Physics

Details

Language :
English
ISSN :
00218979
Volume :
103
Issue :
7
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.180532113

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