Linear and nonlinear optical properties of Si nanocrystals in Si[O.sub.2] deposited by plasma-enhanced chemical-vapor deposition

Authors :: Hernandez, S.
Pellegrino, P.
Martinez, A.
Lebour, Y.
Garrido, B.
Spano, R.
Cazzanelli, M.
Daldosso, N.
Pavesi, L.
Jordana, E.
Fedeli, J.M.
Source :: Journal of Applied Physics. March 15, 2008, Vol. 103 Issue 6, 064309-1-064309-6
Publication Year :: 2008
Abstract: A systematic study of the linear and nonlinear optical properties of Si[O.sub.x] films deposited on silica by plasma-enhanced chemical-vapor deposition (PECVD) technique is presented. The contribution per nanocrystal to the electronic third-order nonlinear susceptibility is found to increase with reduction in the size of the Si nanoparticles due to the appearance of electronic transitions between discrete levels induced by quantum confinement.

Subjects :: Chemical vapor deposition -- Analysis
Silicon compounds -- Chemical properties
Silicon compounds -- Optical properties
Dielectric films -- Chemical properties
Dielectric films -- Optical properties
Thin films -- Chemical properties
Thin films -- Optical properties
Silica -- Chemical properties
Physics

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