InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring lasers

A new technique is proposed for processing InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring lasers capable of operating in a single longitudinal mode. The technique uses chemical vapor deposition to grow the laser structures and reactive ion etching to create the ridge waveguide, gap coupler and total internal reflection mirror. Lasers fabricated using the proposed method show excellent asymmetry in their emission spectra.